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ウェハ支持台、およびそのウェハ支持台が用いられてなる化学的気相成長装置
专利权人:
昭和電工株式会社
发明人:
深田 啓介,百瀬 賢治
申请号:
JP20130142005
公开号:
JP6078428(B2)
申请日:
2013.07.05
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
Each of these wafer-support mounts (7), which are used in a CVD device (1) that forms layers on wafers (W), has a wafer placement surface (7a) in the center of the top surface thereof and a wafer-support section (7b) surrounding same. Each wafer-support section (7b) has the following: vertical wafer-support side surfaces (7b1) that encircle the side surfaces of the wafer placed there; and a surrounding top surface that includes downwardly sloped surfaces (7b2) that slope downwards in the radially outwards direction from the top edges of the wafer-support side surfaces so as to encircle same.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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