A plasma enhanced chemical vapor deposition apparatus is disclosed. The plasma enhanced chemical vapor deposition apparatus includes a pair of magnetic field generating unit arranged to face each other with a gap therebetween; a pair of facing electrodes arranged to face each other between the pair of magnetic field generating units; a gas supply unit configured to supply a reaction gas into a space between the pair of facing electrodes; and a precursor supply unit configured to supply a precursor into the space between the pair of facing electrodes. A facing magnetic field may be formed between the pair of magnetic field generating units.
