Ａｇドープｐ型ＺｎＯ系半導体結晶層の製造方法

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专利权人:

スタンレー電気株式会社

发明人:

斎藤 千寿,佐野 道宏,加藤 裕幸

申请号：

JP20140012017

公开号：

JP6267973(B2)

申请日:

2014.01.27

申请国别(地区):

日本

年份:

2018

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide a method of manufacturing a p-type ZnO-based semiconductor crystal layer in which an Ag element is doped into a ZnO-based semiconductor.SOLUTION: A method of manufacturing a p-type ZnO-based semiconductor crystal layer includes: a first step of growing a base layer that can epitaxially grow a ZnO-based semiconductor layer; a second step of simultaneously supplying Zn, O, Ag of a p-type impurity, and a Group-3B element of an n-type impurity on the base layer to grow the ZnO-based semiconductor layer into which Ag and the Group-3B element are codoped; and a third step of annealing the ZnO-based semiconductor layer into which Ag and the Group-3B element are codoped to make it be p-type.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/