Ｃｕドープｐ型ＺｎＯ系半導体結晶層とその製造方法

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专利权人:

スタンレー電気株式会社

发明人:

佐野 道宏,加藤 裕幸,山本 哲也

申请号：

JP20130089560

公开号：

JP6116989(B2)

申请日:

2013.04.22

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide a p-type ZnO-based semiconductor crystal layer obtained by doping a single Cu element to a ZnO-based semiconductor.SOLUTION: A Cu-doped p-type ZnO-based semiconductor crystal layer is a ZnO-based semiconductor crystal layer obtained by doping Cu of 5% or more in terms of an atom ratio of a positive element, and has such a configuration that two Cu atoms are arranged adjacently to two group-II sites belonging to adjacent layers in a crystal via an O atom.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/