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ZnOターゲット材及び透明導電膜の製造方法
专利权人:
宇部マテリアルズ株式会社;日本タングステン株式会社
发明人:
三谷 敦志,財田 真人,久保 寛明,松永 泰蔵,田中 真樹,上野 修司,味冨 晋三,渡邉 景太,永野 光芳
申请号:
JP20130265340
公开号:
JP6280737(B2)
申请日:
2013.12.24
申请国别(地区):
日本
年份:
2018
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a ZnO target material in which a volume resistivity of a transparent conductive film obtained by deposition is low, and transmittance in a near-infrared region is high, and dispersion of a sheet resistance is little; and to provide a transparent conductive film deposited by using the same.SOLUTION: A ZnO target material contains Al as much as 1 wt% or more and below 5 wt% in terms of AlO, Si as much as 0.005 wt% or more and below 0.05 wt% in terms of SiO, and Mg as much as 0.005 wt% or more and below 0.1 wt% in terms of MgO. A transparent conductive film is deposited by using the ZnO target material.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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