窒化アルミニウム膜の成膜方法、弾性波デバイスの製造方法、及び窒化アルミニウム膜の製造装置

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专利权人:

太陽誘電株式会社

发明人:

横山 剛

申请号：

JP20130188581

公开号：

JP6284726(B2)

申请日:

2013.09.11

申请国别(地区):

日本

年份:

2018

代理人:

摘要：

PROBLEM TO BE SOLVED: To deposit provide an aluminum nitride film with a stable composition, which contains aluminum, nitrogen, and at least two elements other than aluminum and nitrogen.SOLUTION: A film deposition method of an aluminum nitride film according to the invention, in which a target 22, which contains aluminum and at least two elements other than aluminum, is sputtered under an atmosphere containing nitrogen. The aluminum nitride film with a stable composition can be deposited because the aluminum nitride film, which contains aluminum, nitrogen, and at least two elements other than aluminum and nitrogen, can be deposited using one target.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/