PROBLEM TO BE SOLVED: To provide a film-forming method capable of forming a film which is free from film defect and has stable performance by high-frequency plasma CVD.SOLUTION: In a high-frequency plasma CVD film-forming method, raw material gas is supplied to a plasma generating region which is positioned between a power feeding electrode and a counter electrode and held under reduced pressure, and film is deposited on a surface of a base material arranged in the plasma generating region by plasma generated by applying high-frequency voltage to the power feeding electrode . The base material is placed on the power feeding electrode, a gas blow-out port at the tip of a gas supply pipe is arranged in the vicinity of the power feeding electrode, and the raw material gas is supplied to form a film.
