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成膜装置および膜の製造方法
专利权人:
昭和電工株式会社
发明人:
武藤 大祐,木村 優介,歌代 智也,高橋 聖一,栗林 央知,保田 直樹
申请号:
JP20120285153
公开号:
JP6118105(B2)
申请日:
2012.12.27
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
PROBLEM TO BE SOLVED: To improve efficiency in the use of a material gas in film formation.SOLUTION: In a deposition apparatus, a material gas Gs is supplied in an internal space in a housing chamber 100 for housing a substrate from a lateral of the substrate along an X direction by using a material gas supply part, and a first block gas Gb1 is supplied obliquely downward along the X direction to a position on an upstream side in the X direction from the substrate and on a downstream side in the X direction from a supply duct 210. By doing this, the material gas Gs is pressed by the first block gas Gb1 at a position on the upstream side in the X direction from the substrate thereby to inhibit diffusion of the material gas Gs before reaching the substrate.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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