PROBLEM TO BE SOLVED: To provide a gate insulation film that can be formed by application, and has excellent transparency, heat-resistant transparency, and crack resistance, provide a radiation-sensitive resin composition for forming the gate insulation film, provide a cured film and a semiconductor element, and provide a display device having the semiconductor element.SOLUTION: A TFT 3 as a semiconductor element comprises a semiconductor layer 6, a gate electrode 4 and a gate insulation film 5. The gate insulation film 5 is formed using [A] siloxane compound, and [B] radiation-sensitive resin composition comprising photopolymerization initiator of formula (2) or formula (4). The TFT 3 is used as a switching element for the configuration of a display device.
