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半導体素子、感放射線性樹脂組成物、硬化膜および表示素子
专利权人:
JSR株式会社
发明人:
一戸 大吾
申请号:
JP20130098711
公开号:
JP6056644(B2)
申请日:
2013.05.08
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a semiconductor element whose characteristic deterioration due to the influence of light is reduced, a radiation-sensitive resin composition and a cured film which are used for forming the semiconductor element, and a display element.SOLUTION: A semiconductor element 1 comprises, on a substrate 10, a semiconductor layer 2 and both a source electrode 3 and a drain electrode 4 which are provided on a first surface of the semiconductor layer 2. A cured film 5 formed using a radiation-sensitive resin composition containing a photoacid generator is disposed between the semiconductor layer 2 and both the source electrode 3 and the drain electrode 4. The first surface of the semiconductor layer 2 and the drain electrode 4 are electrically connected via a through hole 6 formed by patterning the cured film 5. The cured film 5 has a light-shielding property by the photoacid generator. A semiconductor substrate is constituted using the semiconductor element 1 to provide a liquid crystal
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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