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真空蒸着装置および真空蒸着方法
专利权人:
日本電気株式会社
发明人:
池田 祐三
申请号:
JP20120077634
公开号:
JP6127372(B2)
申请日:
2012.03.29
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a vacuum vapor deposition device and a vacuum vapor deposition method, capable of executing, substantially in just proportion, the vapor deposition of a vapor deposition material such as a metallic material on a surface of a vapor deposition target such as a semiconductor wafer.SOLUTION: In a vacuum vapor deposition method by a vacuum vapor deposition device, heated liquid vapor deposition material MT is rotated substantially in the horizontal direction to form a liquid surface MS in a predetermined parabolic surface shape, and by reducing the rotational speed according to the reduction of the amount of the vapor deposition material MT, molecular beams are subjected to flight uniformly with time onto a lower surface of a vapor deposition target SB.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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