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蒸着装置、成膜方法及び有機EL装置の製造方法
专利权人:
株式会社カネカ
发明人:
川村 祐介,木村 俊彦,上山 大地,下舘 広昌
申请号:
JP20130243884
公开号:
JP6282852(B2)
申请日:
2013.11.26
申请国别(地区):
日本
年份:
2018
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus for acquiring a desired film deposition rate by suppressing the material deterioration of a thin film forming material being produced.SOLUTION: A vapor deposition apparatus 1 comprises a substrate mounted in a vacuum chamber 21 thereby to form the substrate with a thin film forming material produced as a steam in an evaporator 4. The evaporator 4 includes: evaporation chambers 411 and 412, thin film forming material feeding parts 421 and 422, a carrier gas feeding part and a vapor containing gas discharge part. A vapor containing gas containing steam can be produced in the evaporation chambers 411 and 412 from the thin film forming material, which is fed as powder from the thin film forming material feeding parts 421 and 422, and the carrier gas, which is fed from the carrier gas feed section to the evaporation chambers 411 and 412, and the steam containing gas can be fed from the evaporation chambers 411 and 412 to a vacuum chamber 21 via the stea
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