ＩＶ族金属酸化物膜の作製方法

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专利权人:

東ソー株式会社;公益財団法人相模中央化学研究所

发明人:

木下 智之,岩永 宏平,川畑 貴裕,大島 憲昭,平井 聡里,原田 美徳,新井 一喜,多田 賢一

申请号：

JP20120193841

公开号：

JP6116834(B2)

申请日:

2012.09.04

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide a manufacturing method in which a group IV metal oxide film useful as a semiconductor element and an optical element is manufactured at low temperature.SOLUTION: A material for film production is obtained such that a vinylene diamide complex shown by general formula (1) is reacted with one or more oxidizing agents chosen from a group consisting of oxygen gas, air, ozone, water and hydrogen peroxide. In the formula, M denotes a titanium atom or a silicon atom; Rand Reach independently denote a 3-12C alkyl group; Rand Reach independently denote a hydrogen atom or a 1-4C alkyl group; Rdenotes a 1-12C alkyl group that may be substituted by a fluorine atom.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/