酸化物半導体薄膜及びその製造方法、並びに当該酸化物半導体薄膜を備えてなる薄膜トランジスタ

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专利权人:

出光興産株式会社

发明人:

川嶋 絵美,江端 一晃,西村 麻美,矢野 公規

申请号：

JP20130102484

公开号：

JP6139973(B2)

申请日:

2013.05.14

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide an oxide semiconductor film which can improve reliability of a thin film transistor.SOLUTION: Provided is an oxide semiconductor thin film in which molecular weight of water desorbed within a temperature ranged of not less than 200°C and not more than 600°C is not lower than 3×10cm; and molecular weight of water desorbed within a temperature range of not less than 200°C and less than 400°C is not greater than 1×10cm; and molecular weight of water desorbed within a temperature range of not less than 400°C and not more than 600°C is not lower than 1×10cmin a thermal desorption method.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/