The film formation method according to the embodiment of the present invention is provided with a first step for applying a VHF power from the VHF power supply (107) and a first DC voltage from a DC power supply (108) to a Ta target (T), and sputtering the Ta target (T), and a second step for depositing Ta atoms sputtered from the Ta target in the first step onto a substrate (S) being held at a first temperature on a substrate stage (105), and forming a Ta film having specific resistance of 60 μΩ・cm or less.
