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フレーク状酸化物半導体の製造方法、酸化物半導体膜の製造方法、薄膜トランジスタの製造方法、液晶表示装置の画素電極形成方法
专利权人:
株式会社ニコン
发明人:
中積 誠,西 康孝,瀧 優介
申请号:
JP20130018647
公开号:
JP6065620(B2)
申请日:
2013.02.01
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a flake-like oxide semiconductor, a method of manufacturing an oxide semiconductor film, a method of manufacturing a thin-film transistor, and a method of forming a pixel electrode of a liquid crystal display device, capable of forming a high-performance oxide semiconductor film on a substrate at a low temperature.SOLUTION: A method of manufacturing a flake-like oxide semiconductor includes: immersing a substrate having a swelling property to predetermined liquid and having an oxide semiconductor film formed thereon into the liquid, and thereby, peeling the oxide semiconductor film from the substrate; and dispersing the peeled oxide semiconductor film into the liquid to make it flaky.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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