A semiconductor device includes a substrate having a hexagonal crystalline structure and a (0001) surface, and conductive films on the surface of the substrate. The conductive films include a first conductive film and a second conductive film located above the first conductive film with respect to the surface, wherein the first conductive film has a crystalline structure which does not have a plane that has a symmetry equivalent to the symmetry of atomic arrangement in the surface of the substrate, the second conductive film has a crystalline structure having at least one plane that has a symmetry equivalent to the symmetry of atomic arrangement in the surface of the substrate, and the second conductive film is polycrystalline and has a grain size no larger than 15 μm.
