Hoque Md M.,Parris Patrice,Chen Weize,De Souza Richard
申请号：
US201314133217
公开号：
US9978689(B2)
申请日:
2013.12.18
申请国别(地区):
美国
年份:
2018
代理人:
Schumm Sherry W.
摘要：
An embodiment of an Ion Sensitive Field Effect Transistor (ISFET) structure includes a substrate, source and drain regions formed within the substrate and spatially separated by a channel region, a gate dielectric and a gate formed over the channel region, multiple conductive structures overlying the surface of the substrate, and one or more protection diode circuits coupled between one or more of the multiple conductive structures and the substrate. The multiple conductive structures include a floating gate structure and a sense plate structure. The floating gate structure is formed over the gate dielectric and includes the gate. The sense plate structure is electrically coupled to the floating gate structure and is configured to sense a concentration of a target ion or molecule in a fluid adjacent to a portion of the sense plate structure.
