Dual gate biologically sensitive field effect transistor

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专利权人:

Taiwan Semiconductor Manufacturing Co., Ltd.

发明人:

Huang Yu-Jie,Huang Jui-Cheng,Hsieh Cheng-Hsiang

申请号：

US201514961588

公开号：

US10161901(B2)

申请日:

2015.12.07

申请国别(地区):

美国

年份:

2018

代理人:

Sterne, Kessler, Goldstein & Fox P.L.L.C.

摘要：

A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/