Liu Yi-Shao,Bashir Rashid,Lai Fei-Lung,Cheng Chun-wen
申请号：
US201715422843
公开号：
US10094801(B2)
申请日:
2017.02.02
申请国别(地区):
美国
年份:
2018
代理人:
Sterne, Kessler, Goldstein & Fox P.L.L.C.
摘要：
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity. An amplification factor of the BioFET device may be provided by a difference in capacitances associated with the gate structure on the first surface and with the interface layer formed on the second surface.
