LEE Kwan Hyi,JEUN Minhong,LEE Seok,KIM Sang Kyung,PARK Sungwook
申请号：
US201715684939
公开号：
US2018364194(A1)
申请日:
2017.08.24
申请国别(地区):
美国
年份:
2018
代理人:
摘要：
Provided is a field-effect transistor that can reduce noise, be produced by a simplified manufacturing method, and also have a plurality of active patterns and gate patterns designed to be combinable according to a detection purpose. The field-effect transistor includes a lower silicon layer and a buried oxide layer disposed on the lower silicon layer; an active pattern disposed on the buried oxide layer and including a channel region, a source region, and a drain region; a gate pattern disposed on the active pattern to at least partially overlap the active pattern; a source electrode disposed in direct contact with the source region on the active pattern, and a drain electrode disposed in direct contact with the drain region on the active pattern; and a gate insulating film disposed between the active pattern and the gate pattern.
