Nanopillar field-effect and junction transistors with functionalized gate and base electrodes

• 收藏
• 分享

专利权人:

California Institute of Technology;SANOFI

发明人:

Rajagopal Aditya,Chang Chieh-feng,Plettenburg Oliver,Petry Stefan,Scherer Axel,Tschirhart Charles L.

申请号：

US201514720473

公开号：

US9966443(B2)

申请日:

2015.05.22

申请国别(地区):

美国

年份:

2018

代理人:

Steinfl + Bruno LLP

摘要：

Systems and methods for molecular sensing are described. Molecular sensors are described which are based on field-effect or bipolar junction transistors. These transistors have a nanopillar with a functionalized layer contacted to either the base or the gate electrode. The functional layer can bind molecules, which causes an electrical signal in the sensor.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/