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Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
专利权人:
Agilome, Inc.
发明人:
Hoffman Paul
申请号:
US201615256493
公开号:
US10006910(B2)
申请日:
2016.09.02
申请国别(地区):
美国
年份:
2018
代理人:
Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
摘要:
This invention concerns Chemically-sensitive Field Effect Transistors (ChemFETs) that are preferably fabricated using semiconductor fabrication methods on a semiconductor wafer, and in preferred embodiments, on top of an integrated circuit structure made using semiconductor fabrication methods. The instant ChemFETs typically comprise a conductive source, a conductive drain, and a channel composed of a one-dimensional (1D) or two-dimensional (2D) transistor nanomaterial, which channel extends from the source to the drain and is fabricated using semiconductor fabrication techniques on top of a wafer. The ChemFET also includes a gate, often the gate voltage is provided through a fluid or solution proximate the ChemFET. Such ChemFETs, preferably configured in independently addressable arrays, may be employed to detect a presence and/or concentration changes of various analyte types in chemical and/or biological samples, including nucleic acid hybridization and/or sequencing reactions.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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