A polymerization method of a high-molecular weight compound (A1) having a constituent unit (a0) derived from a compound represented by the following general formula (a0-1), which has excellent lithography properties, and is useful as a resist composition, the method including conducting polymerization using a mixed solvent containing 10 mass % or more of one or more of a cyclic ketone-based solvent, an ester-based solvent, and a lactone-based solvent. A resist composition containing the high-molecular weight compound (A1) and a method for forming a resist pattern using the same.