レジスト組成物、レジストパターン形成方法、高分子化合物、化合物

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专利权人:

東京応化工業株式会社

发明人:

高木 大地,新井 雅俊,横谷 次朗

申请号：

JP20120215133

公开号：

JP6286118(B2)

申请日:

2012.09.27

申请国别(地区):

日本

年份:

2018

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide a resist composition which has high solubility with an alkali developing solution while maintaining lithographic characteristics and which can achieve reduction of defects, and to provide a method for forming a resist pattern using the resist composition.SOLUTION: The resist composition generates an acid by exposure and exhibits changes in the solubility with an alkali developing solution by an action of the acid. The composition comprises a polymeric compound having a structural unit that includes a base decomposable group and is crosslinked by a crosslinking structure.

来源网站：

中国工程科技知识中心

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http://www.ckcest.cn/home/