PROBLEM TO BE SOLVED: To provide a temperature measurement device capable of measuring temperature of a power semiconductor element without incorporating a special diode for a temperature sensor into the power semiconductor element.SOLUTION: During a pause period of MOSFET 11 which is a power semiconductor element, a forward direction current IF is made to flow a Zener diode D1 or D2 attached to the MOSFET 11, for detecting V1 that is correlated to a forward direction voltage VF of the Zener diode D1 or D2. Based on the temperature characteristic of the forward direction current IF and the forward direction voltage VF of the Zener diode D1 or D2 which have been measured in advance, a temperature of the Zener diode D1 or D2 is calculated, to measure the temperature of the MOSFET 11.COPYRIGHT: (C)2015,JPO&INPIT【課題】パワー半導体素子に温度センサ用の特別のダイオードを組み込むことなく、パワー半導体素子の温度を計測できる温度計測装置を提供する。【解決手段】パワー半導体素子であるMOSFET11の休止期間に、MOSFET11に付属して設けられたツェナーダイオードD1又はD2に順方向電流IFを流し、ツェナーダイオードD1又はD2の順方向電圧VFに相関するV1を検出し、予め測定したツェナーダイオードD1又はD2の順方向電流IFと順方向電圧VFの温度特性に基づいてツェナーダイオードD1又はD2の温度を算出して、MOSFET11の温度を計測する。【選択図】 図2
