A MOSFET including a JFET resistor resultant between a drain region and a channel region caused by depletion of current carriers. Since most of the drain-source voltage is imposed on the JFET resistor, the voltage imposed on a channel region is reduced to prevent concentration of an electric field therein. The JFET resistor adjusts the saturation current of the MOSFET and hence the width of the gate electrode can be sufficiently secured. This also prevents concentration of an electric field onto the channel region. In the MOSFET, the saturation current is reduced while avoiding creation of hot carriers. It is therefore possible to provide an MOSFET suitable for an analog switch.
