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絶縁基板と冷却器の接合構造体、その製造方法、パワー半導体モジュール、及びその製造方法
专利权人:
日産自動車株式会社;京セラ株式会社
发明人:
谷本 智,早川 浩二
申请号:
JP20130206918
公开号:
JP6259625(B2)
申请日:
2013.10.02
申请国别(地区):
日本
年份:
2018
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a junction structure of an insulation substrate and a cooler, the junction structure having a high resistance with respect to a hot-cold cycle stress in which temperature difference is large, a manufacturing method of the junction structure, a power semiconductor module, and a manufacturing method of the power semiconductor module.SOLUTION: A junction structure includes an insulation substrate 200 consisting of: a flat plate-shaped ceramic substrate 11; an upper circuit metal plate 13 bonded to an upper surface of the ceramic substrate 11; and a lower circuit metal plate 12 bonded to a lower surface of the ceramic substrate 11. Further, the junction structure includes a metal cooler 100, and a bonding layer which bonds a lower surface of the lower circuit metal plate 12 and an upper surface of the cooler 100. The lower circuit metal plate 12 includes at least one low thermal expansion high elastic metal layer, and the bonding layer is an ultrahigh temperature bonding layer 10
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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