ドライエッチング方法、ドライエッチング装置、金属膜及びそれを備えたデバイス

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专利权人:

セントラル硝子株式会社

发明人:

菊池 亜紀応,武田 雄太

申请号：

JP20130116250

公开号：

JP6142676(B2)

申请日:

2013.05.31

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

The etching rate on a metal film that forms a penta- or hexa-coordinated complex structure with ²-diketone is improved. In a dry etching method for etching a metal film formed on a substrate by use of etching gas containing ²-diketone, the metal film contains at least one metal material that forms a penta- or hexa-coordinated complex structure with ²-diketone; the etching gas containing ²-diketone contains at least one additive among H 2 O or H 2 O 2 ; and the additive is contained at a volume concentration of 1% or greater and 20% or less.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/