A sputtering target containing 20 at% to 40 at% of Te, 5 at% to 20 at% of Cu, 5 at% to 15 at% of Zr, and remainder being Al, wherein a structure of the sputtering target is comprise of an Al phase, a Cu phase, a CuTeZr phase, a CuTe phase and a Zr phase. The present invention aims to provide an Al-Te-Cu-Zr-based alloy sputtering target capable of effectively suppressing the degradation of properties caused by compositional deviation, as well as a method of manufacturing the same.
