In order to form a phase change thin film being flat in a nanometer level and having a good coverage, which is essential for realizing a three-dimensional ultra-high integrated phase change memory, an equipment for vapor phase growth of a phase change thin film is provided which form a phase change thin film at low temperature while the film is being kept in a completely amorphous state. A structure is provided in which an ammonia cracker is connected to a reactor of the equipment for vapor phase growth for a nitrogen radical obtained by decomposing ammonia gas. Consequently, low temperature decomposition of metal organic precursor and film formation on a substrate surface are realized. With the use of this equipment, it is possible to realize a completely amorphous film which has a flat surface at a low temperature of 135° C. using an amine complex as a Ge precursor.
