マルチレベルインバータ及びこれを用いた磁気共鳴イメージング装置
- 专利权人:
- 株式会社日立メディコ
- 发明人:
- 今橋 直子,堂本 拓也,高野 博司
- 申请号:
- JP2007174908
- 公开号:
- JP5216260B2
- 申请日:
- 2007.07.03
- 申请国别(地区):
- JP
- 年份:
- 2013
- 代理人:
- 摘要:
PROBLEM TO BE SOLVED: To provide a multilevel inverter which can be miniaturized and which can share inverters different in the number of levels and to provide a magnetic resonance imaging device using the multilevel inverter.
SOLUTION: A connector where an emitter of IGBT S1 is connected to a cathode of a diode D1 and a connector where a collector of IGBT S2 is connected to an anode of a diode D2 are set to form a module structure. An arm 1 and an arm 2 are constituted by using four sets of modules. A DC power supply E-E0 is connected to terminals P and N of the module B2 of the arm 1, and terminals A and K of the module B2 are connected to a partial pressure point H of DC power voltage. A terminal O1 of the module B2 of the arm 1 is connected to the terminal P of the module B1, a terminal O2 of the module B2 is connected to the terminal N of the module B1 and the terminals O1 and O2 of the module B1 are connected. The terminals of the arms 2 are similarly connected and a three-level inverter is constituted.
COPYRIGHT: (C)2009,JPO&INPIT
- 来源网站:
- 中国工程科技知识中心
相关发明人
相关专利
- Bidirectional power switching with bipolar conduction and with two control terminals gated by two merged transistors
- High power insulated gate bipolar transistors
- Systems and methods for testing a clamp function for insulated gate bipolar transistors
- Method and system for measuring the thermal resistance of the bipolar power transistor with the insulated gate
- CIRCUIT FOR DETECTING FAILURE OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) POWER MODULE