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CIRCUIT FOR DETECTING FAILURE OF INSULATED GATE BIPOLAR TRANSISTOR (IGBT) POWER MODULE
专利权人:
Hyundai Motor Company ;Kia Motors Corporation
发明人:
Jang Ji Woong,Lee Ki Jong,Jeong Kang Ho
申请号:
US201514960362
公开号:
US2017030962(A1)
申请日:
2015.12.05
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
A circuit for detecting failure of an insulated-gate bipolar transistor (IGBT) power module, is provided to combine failure detecting signals of an IGBT power module using a photo coupler to transmit the isolated signals. The failure detecting circuit includes a circuit that combines six phase isolated failure detecting signals transmitted from a gate drive IC via a photo coupler to be one signal. A plurality of logic gate ICs are omitted, to reduce a material cost, a size of a circuit board, and power consumption.
来源网站:
中国工程科技知识中心
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http://www.ckcest.cn/home/

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