Bidirectional power switching with bipolar conduction and with two control terminals gated by two merged transistors

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专利权人:

Ideal Power Inc

发明人:

William C. Alexander,Richard A Blanchard

申请号：

GB20160008377

公开号：

GB2534800(B)

申请日:

2015.10.20

申请国别(地区):

英国

年份:

2017

代理人:

摘要：

Power semiconductor devices, methods, and systems, in which additional switches are added on both surfaces of a two-sided power device with bidirectional conduction. The additional switches are preferably vertical trench MOS transistors, and permit the emitter-base junction on either surface to be shunted easily.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/