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Systems and methods for testing a clamp function for insulated gate bipolar transistors
专利权人:
NXP USA, Inc.
发明人:
Sicard Thierry
申请号:
US201514733589
公开号:
US9720030(B2)
申请日:
2015.06.08
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
An integrated circuit includes an insulated gate bipolar transistor (“IGBT”), a clamp element coupled to a control gate of the IGBT to allow current flow in a first direction when voltage is applied to the control gate of the IGBT, and a blocking element coupled to the control gate of the IGBT and to the clamp element. The blocking element allows current flow in a second direction when voltage is removed from the control gate of the IGBT, the second direction is opposite the first direction. A resistive element has a first terminal and a second terminal, the first terminal is coupled between an anode of the clamping element and an anode of the blocking element and the second terminal is coupled to an output of test circuitry.
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