The present invention provides two methods for crystallizing a metal oxide semiconductor layer and a semiconductor structure. The first crystallization method is treating an amorphous metal oxide semiconductor layer including indium with oxygen at a pressure of about 550 mtorr to about 5000 mtorr and at a temperature of about 200° C. to about 750° C. The second crystallization method is, firstly, sequentially forming a first amorphous metal oxide semiconductor layer, an aluminum layer, and a second amorphous metal oxide semiconductor layer on a substrate, and, secondly, treating the first amorphous metal oxide semiconductor layer, the aluminum layer, and the second amorphous metal oxide semiconductor layer with an inert gas at a temperature of about 350° C. to about 650° C.
