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Staged via formation from both sides of chip
专利权人:
Vage Oganesian
发明人:
Vage Oganesian,Belgacem Haba,Ilyas Mohammed,Craig Mitchell,Piyush Savalia
申请号:
US12884649
公开号:
US08847380B2
申请日:
2010.09.17
申请国别(地区):
US
年份:
2014
代理人:
摘要:
A method of fabricating a semiconductor assembly can include providing a semiconductor element having a front surface, a rear surface, and a plurality of conductive pads, forming at least one hole extending at least through a respective one of the conductive pads by processing applied to the respective conductive pad from above the front surface, forming an opening extending from the rear surface at least partially through a thickness of the semiconductor element, such that the at least one hole and the opening meet at a location between the front and rear surfaces, and forming at least one conductive element exposed at the rear surface for electrical connection to an external device, the at least one conductive element extending within the at least one hole and at least into the opening, the conductive element being electrically connected with the respective conductive pad.
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