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Chemically sensitive field effect transistors and uses thereof in electronic nose devices
专利权人:
Technion Research and Development Foundation Ltd.
发明人:
Haick Hossam
申请号:
US200812669965
公开号:
US10011481(B2)
申请日:
2008.07.24
申请国别(地区):
美国
年份:
2018
代理人:
Roach Brown McCarthy & Gruber, P.C `McCarthy Kevin D.
摘要:
The present invention provides an electronic nose device based on chemically sensitive field effect transistors. In particular, the sensors of the electronic nose device are composed of non-oxidized, functionalized silicon nanowires which can detect volatile organic compounds with very high sensitivity. Methods of use in diagnosing diseases including various types of cancer are disclosed.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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