Chemically sensitive field effect transistors and uses thereof in electronic nose devices

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专利权人:

Technion Research and Development Foundation Ltd.

发明人:

Haick Hossam

申请号：

US200812669965

公开号：

US10011481(B2)

申请日:

2008.07.24

申请国别(地区):

美国

年份:

2018

代理人:

Roach Brown McCarthy & Gruber, P.C `McCarthy Kevin D.

摘要：

The present invention provides an electronic nose device based on chemically sensitive field effect transistors. In particular, the sensors of the electronic nose device are composed of non-oxidized, functionalized silicon nanowires which can detect volatile organic compounds with very high sensitivity. Methods of use in diagnosing diseases including various types of cancer are disclosed.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/