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ZnO DEPOSITION MATERIAL AND ZnO FILM FORMED OF SAME
专利权人:
Mitsubishi Materials Corporation
发明人:
MAYUZUMI, Yoshitaka
申请号:
EP20070741954
公开号:
EP2011896(B1)
申请日:
2007.04.19
申请国别(地区):
欧洲专利局
年份:
2017
代理人:
摘要:
A ZnO deposition material to be used for forming a transparent conductive film is composed of a ZnO pellet having a ZnO purity of 98% or more. The pellet includes one or more kinds of elements selected from the group consisting of Y, La, Sc, Ce, Pr, Nd, Pm and Sm. The ZnO pellet is polycrystal or monocrystal. The ZnO film formed by a vacuum film forming method employing the ZnO deposition material as a target material can exhibit excellent conductivity. The vacuum film forming method is preferably an electron beam vapor deposition method, an ion plating method or a sputtering method.
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