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Current generation circuit, and bandgap reference circuit and semiconductor device including the same
专利权人:
RENESAS ELECTRONICS CORPORATION
发明人:
Motozawa Atsushi,Okuda Yuichi
申请号:
US201514669352
公开号:
US9678526(B2)
申请日:
2015.03.26
申请国别(地区):
美国
年份:
2017
代理人:
Mattingly & Malur, PC
摘要:
A current generation circuit including a first and a second bipolar transistors, a current distribution circuit that makes a first current and a second current flow through the first and second bipolar transistors, respectively, the first current and the second current corresponding to a first control voltage, a first NMOS transistor disposed between the first bipolar transistor and the first current distribution circuit, a second NMOS transistor disposed between the second bipolar transistor and the first current distribution circuit, a first resistive element, a first operational amplifier that outputs the second control voltage to the gates of the first and the second NMOS transistors according to a drain voltage of the first NMOS transistor and a reference bias voltage, and a second operational amplifier that generates the first control voltage according to a drain voltage of the second NMOS transistor and the reference bias voltage.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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