Commissariat A L'Energie Atomique ET AUX Energies Alternatives
发明人:
Manakli Serdar
申请号：
US201113641120
公开号：
US9607808(B2)
申请日:
2011.04.13
申请国别(地区):
美国
年份:
2017
代理人:
Baker Hostetler LLP
摘要：
A method of electron-beam lithography by direct writing solves the reliability of design of etched components through rounding of the corners of contiguous patterns, notably in patterns to be etched of critical dimension of the order of 35 nm. The method determines critical patterns, and correction patterns by subtracting patterns of corrections of dimensions and of locations as a function of rounding of external or internal corners to be corrected and etching of the corrected design. The corrections may be by a correction model taking account of the parameters of the critical patterns. A correction of the proximity effects specific to these methods is also performed, by resizing of edges of blocks to be etched in combination optimized by the energy latitude with a modulation of the radiated doses. A rescaling and negation functions and eRIF functions may be used to optimize the parameters and the realization of the extrusion.
