Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities

• 收藏
• 分享

专利权人:

Lextar Electronics Corporation

发明人:

Chen Jun-Rong,Chou Hsiu-Mei,Ye Jhao-Cheng

申请号：

US201514694602

公开号：

US9673353(B2)

申请日:

2015.04.23

申请国别(地区):

美国

年份:

2017

代理人:

Moser Taboada

摘要：

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/