Anisotropic material damage process for etching low-K dielectric materials

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专利权人:

GLOBALFOUNDRIES Inc.

发明人:

Ryan Errol Todd

申请号：

US201414334385

公开号：

US9583380(B2)

申请日:

2014.07.17

申请国别(地区):

美国

年份:

2017

代理人:

Amerson Law Firm, PLLC

摘要：

In one example, a method includes forming a mask layer above or in a dielectric material. The dielectric material is exposed to photon radiation in an ambient atmosphere comprising a carbon gettering agent to generate damaged portions of the dielectric material. The mask layer blocks the photon radiation. The damaged portions of the dielectric material are removed.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/