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Tipless Transistors, Short-Tip Transistors, and Methods and Circuits Therefor
专利权人:
Mie Fujitsu Semiconductor Limited
发明人:
Kidd David A.
申请号:
US201715398447
公开号:
US2017117273(A1)
申请日:
2017.01.04
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.
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