BUMP STRUCTURE HAVING FIRST PORTION OF COPPER AND SECOND PORTION OF PURE TIN COVERING THE FIRST PORTION, AND INTERCONNECT STRUCTURE USING THE SAME

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专利权人:

LITE-ON SEMICONDUCTOR CORPORATION

发明人:

Lou Bai-Yao

申请号：

US201514970552

公开号：

US2017179058(A1)

申请日:

2015.12.16

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

A bump structure includes a pad. A passivation layer covers a perimeter of the pad. The passivation layer includes an opening exposing an area of the pad. A first portion is disposed on the pad. The first portion includes a top surface and a sidewall. A second portion covers the top surface and entire sidewall of the first portion.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/