Structures and formation methods of a semiconductor device structure are provided. A method for forming a semiconductor device structure includes forming a first patterned conductive layer. The method also includes forming a dielectric layer covering the first conductive layer. The method further includes forming a conductive via in the dielectric layer. In addition, the method includes forming a resistor layer and a protection layer over the dielectric layer. The method also includes patterning the protection layer to form a protection feature and patterning the resistor layer to form a resistor feature overlapping the first conductive layer. The resistor feature is electrically connected to the first conductive layer through the conductive via. The method further includes forming a second conductive layer over the dielectric layer. The top surface of the resistor feature maintains covered by the protection feature during the formation of the second conductive layer.
