Schneider Hartmut,Eberle Freyja,Köhler Steffen,Csatary Peter,Blaschitz Herbert
申请号：
US201615264655
公开号：
US2017073978(A1)
申请日:
2016.09.14
申请国别(地区):
美国
年份:
2017
代理人:
摘要：
A processing facility for manufacturing integrated circuits on semiconductor wafers is provided with at least one radiation generator that generates an EUV (extreme ultraviolet) radiation that is supplied to at least one lithography machine, housed in a factory building, for exposure of the semiconductor wafers. The radiation generator is housed in a building or a building section separate from the factory building. At least one beam guide extends from the building or the building section to the factory building, wherein the EUV radiation is supplied from the building or the building section through the at least one beam guide to the factory building. At least one supply line branches off at an obtuse angle from the at least one beam guide inside the factory building, wherein at least a portion of the EUV radiation is supplied through the at least one supply line to the lithography machine.
