Provided are a chuck, a reaction chamber and a semiconductor processing equipment. The chuck comprises an insulating layer (5) and a substrate (7). The insulating layer (5) comprises a first bearing surface (51) for bearing a central area of a wafer (6) and a second bearing surface (52) surrounding the outer periphery of the first bearing surface (51) for bearing an edge area of the wafer (6), wherein the first bearing surface (51) has a first roughness that can increase contact area between the wafer (6) and the first bearing surface (51) under a condition that gas between the first bearing surface (51) and the wafer (6) is evenly distributed. The reaction chamber comprises the chuck. The semiconductor processing equipment comprises the reaction chamber. The chuck, the reaction chamber and the semiconductor processing equipment can improve heat conduction efficiency from the wafer to the chuck, thereby avoiding damage caused by too fast heating up of the wafer surface.
