Mears Robert J.,Stephenson Robert John,Weeks Keith Doran,Cody Nyles Wynn,Hytha Marek
申请号：
US201715664028
公开号：
US10109479(B1)
申请日:
2017.07.31
申请国别(地区):
美国
年份:
2018
代理人:
Allen, Dyer, Doppelt + Gilchrist, P.A. Attorneys at Law
摘要：
A method for making a semiconductor device may include forming a superlattice on a semiconductor substrate including a respective plurality of stacked groups of layers. Each group of layers may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Further, at least some semiconductor atoms from opposing base semiconductor portions may be chemically bound together through the at least one non-semiconductor monolayer therebetween. The method may further include epitaxially forming a semiconductor layer on the superlattice, and annealing the superlattice to form a buried insulating layer in which the at least some semiconductor atoms are no longer chemically bound together through the at least one non-semiconductor monolayer therebetween.
