Materials and components in phase change memory devices

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专利权人:

Intel Corporation

发明人:

Soncini Valter,Erbetta Davide

申请号：

US201514671204

公开号：

US9741930(B2)

申请日:

2015.03.27

申请国别(地区):

美国

年份:

2017

代理人:

Thorpe North and Western, LLP `Osborne David W.

摘要：

Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith are disclosed and described. Such electrodes can have a resistivity of from 10 to 100 mOhm·cm.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/